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Development of CryoSAS for the quality control of low ppts level of impurities in solar cell by LT-FT-IR

Submission Date :
9 / 8 / 2009 , 13 : 53 : 27
Abstract Number :
104090816126
Presenting Type:
Symposium
Presenting Area :
분석화학 - New Frontiers in Analytical Chemistry
Authors :
김효진
동덕여자대학교 약학대학, Korea
Assigned Code :
목12E3심 Assigend Code Guideline
Presenting Time :
목 15시 : 00분
Semiconductor grade silicone now widely used for the solar cell are considered the puriest material known, nevertheless contains impurities at levels of sub ppts. Therefore determination of sub-ppts level of the shallow impurities such as B and P are major concern in production of single crystal solar cell industry. Shallow impurities in single crystal silicone were determined by low temperature far mid IR transmission spectroscopy (LT-FT-IR) and Photoluminescence (PL). Detection limits of B and P as well as other shallow impurities were obtained sub ppt level with liquid He cooled bolometer by LT-FT-IR. Recently, the closed cycled cryostat (CrySAS) to reduce the consumption of liquid He has been developed for the routine quality control of the solar cell industry.