KCS

We have deposited metal (Titanium and Hafnium) oxynitride thin films on p-type Si(100) substrates at 500℃ using RF PECVD (plasma enhanced chemical vapor deposition) system. Each of titanium iso-propoxide and hafnium t-butoxide was used as precursor for the deposition of nano-crystalline TiO_xN_y and HfO_xN_y thin films with different nitrogen and ammonia flow rate to control oxygen and nitrogen contents in the films. Changes of chemical states of constituent elements in the deposited films were examined by X-ray photoelectron spectroscopy analysis. With increasing nitrogen and ammonia flow rate, the total amounts of nitrogen and titanium were increased while that of oxygen was decreased. The XPS result also showed a binding energy shift toward high energy side with increasing nitrogen content. The film growth orientation and structural characteristics were also analyzed by scanning electron microscopy and X-ray diffraction. Deposition at higher nitrogen flow ratio results in finer clusters with a nano-scale grain size and a slower growth rate.