초록문의 abstract@kcsnet.or.kr

결제문의 member@kcsnet.or.kr

현재 가능한 작업은 아래와 같습니다.
  • 08월 18일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제108회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Scalable Fabrication of Vertically Aligned Si Nanowire Arrays

2011년 8월 1일 15시 39분 08초
Ⅳ-INOR.P-91 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
금 <발표Ⅳ>
저자 및
박이슬, 최성은, 이진석
숙명여자대학교 화학과, Korea
Semiconductor nanowires are being actively investigated because of their unique properties which result from their one-dimensional (1D) nanostructure such as quantum confinement effect. They are not found in the bulk materials. Silicon nanowires (SiNWs) are a particularly important 1D nanomaterial due to their excellent electronic and optical properties. Also, they have nontoxic nature, so it is possible to apply biotechnological field. Vertically aligned SiNWs arrays with scalable fabrication promise more improved device application. In order to achieve the device with desirable properties, it is important to control of growth diameter and location of SiNWs which are regulated by diameter and location of Au nanoparticles (AuNPs) used as a catalyst. There are several methods to form regular patterns of AuNPs on a substrate such as e-beam lithography, interferometric lithography which offer excellent control over the particle size, shape, and spacing. However, they are limited by a multistage, time-consuming, expensive preparation procedure.Here, we report the scalable fabrication of vertically aligned SiNWs arrays using nanosphere lithography (NSL) which offers ordered arrays of AuNPs used as the catalyst. The NSL method represents an inexpensive, easy, scalable and quick method for patterning a material on a substrate. The close-packed silica bead monolayer which was prepared by rubbing method is used as a lithographic mask. The Au was deposited on prepared substrate with close-packed silica bead monolayer, and then the pinholes which exist between silica beads are filled with Au. Before the experiment, silica beads were removed by sonication in organic solution. We synthesized the high crystalline SiNWs using chemical vapor deposition (CVD) method. We also controlled diameter and density of vertical aligned SiNWs by changing deposited Au thickness and silica bead size.