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  • 08월 18일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제108회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Anisotropic Etching of Semiconductor Nanocrystals

등록일
2011년 8월 1일 16시 54분 28초
접수번호
1370
발표코드
Ⅱ-MAT.P-314 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 <발표Ⅱ>
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
임성준, 김원정, 정성한, 서종철, 신승구
포항공과대학교 화학과, Korea
Chemical and photochemical etchings were performed in chloromethane solvents to control the size and shape of CdSe nanorods, CdSe tetrapods, and CdS nanowires. Nanocrystals were synthesized by colloidal growth, and their sizes and shapes were visualized by transmission electron microscopy before and after etching. Crystal structures of nanocrystals were confirmed by X-ray diffraction, and their optical properties were monitored during etching. The surface of etched nanocrystals were characterized by X-ray photoelectron spectroscopy, and the etching products dissolved in solvent were analyzed by matrix-free laser desorption ionization mass spectrometry. The structural analysis shows that the chemical etching with tributylphosphine preferentially shortened the length of nanocrystals, whereas the photochemical etching with both primary alkylamine and tributylphosphine reduced the width more than the length. Both the surface characterization and etching product analysis suggest that the chloride ion is the active species. Tributylphosphine increases the rate of both chemical and photochemical etchings. On the other hand, primary alkylamine inhibits the chemical etching but enables the photochemical etching. Both chemical and photochemical etching processes can be sequentially combined together with organic-based colloidal synthesis to anisotropically reshape the quantum-size and aspect ratio of nanocrystals.

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