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학술발표회초록보기

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  • 08월 18일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제108회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Fabrication of wafer-scale sapphire substrate with photonic crystal pattern generated by combination of nanosphere lithography and dry etching process

등록일
2011년 8월 1일 20시 01분 52초
접수번호
1395
발표코드
Ⅱ-MAT.P-321 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 <발표Ⅱ>
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
박후근, 도영락
국민대학교 생명나노화학과, Korea
We propose the fabrication of wafer-scale sapphire substrate with a two dimensional (2D) air-hole photonic crystal (PC) pattern as an approach to enhance light extraction from light-emitting diodes (LEDs). The wafer-scale sapphire substrates with a 2D air-hole PC pattern were fabricated by combining nanosphere lithography (NSL) and dry etching process. The SiO2 air-hole PC patterns, which were used as etching mask in order to be transferred to the underlying sapphire substrate, were fabricated on wafer-scale sapphire substrate by NSL. Subsequent pattern transfer into the underlying sapphire substrate was achieved using inductively-coupled plasma (ICP) etching process in a gas mixture of BCl3 and Ar. The structural and morphological properties of the sapphire substrate with 2D air-hole PC pattern were investigated by performing scanning electron microscopy (SEM), atomic force microscopy (AFM).

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