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제109회 대한화학회 학술발표회, 총회 및 기기전시회 안내 A Computational Study on the Aluminum Oxide Formation at Al/La1-xSrxMnO3 Interface for Resistance Random Access Memory Applications

등록일
2012년 2월 23일 11시 45분 37초
접수번호
1415
발표코드
MAT.P-1189 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 25일 (수요일) 18:00~21:00
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
이노도
광주과학기술원 신소재공학부, Korea
Resistance random access memory (ReRAM) has been intensively studied as a promising candidate for post-NAND flash memory device. In particular, a simple capacitorlike structure with a metal such as aluminum (Al) or titanium (Ti) and a mixed-valence manganite such as La1-xSrxMnO3 (x ~ 0.3; LSMO) widely investigated because of their relatively stable operation as well as better device performance. Previous studies on a metal/LSMO device showed that oxygen ions in LSMO move to interface and oxidize a reactive metal under an electric field, resulting in resistive switching. Although, the microscopic mechanisms of switching are not yet clear, defects and their migrations have been considered as a key factor for origin of the switching behavior. First-principles calculations have been performed to study the formation of interfacial aluminum oxides of Al/LSMO and to analyze the switching properties. We investigated the change in structure, energy, and diffusion properties of oxygen ions during the oxygen ions migration at Al/LSMO interface. Especially, we focused on the stability of various types of interfacial aluminum oxides during the oxidation process. Based on our results, we suggest a model for resistive switching and their microscopic origin of resistive switching phenomena.

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