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  • 03월 02일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제109회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Facile Method for rGO FET: Selective Adsorption of rGO on SAM-Treated Gold Electrode by Electrostatic Attraction

등록일
2012년 2월 23일 16시 47분 34초
접수번호
1483
발표코드
MAT.P-1204 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 25일 (수요일) 18:00~21:00
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
양지은, 신현석
울산과학기술대학교 에너지공학부, Korea
A facile method for fabrication of negatively and positively charged reduced graphene oxide (rGO) field effect transistor (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. The pre-patterned gold electrode on SiO2(300 nm)/Si wafer is prepared, followed by forming self-assembled monolayers (SAMs) with negative or positive charges on the electrode. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The electrode with SAMs is immersed in a solution with negatively or positively charged graphene oxide (GO) sheets. Then, the GO sheets are selectively adsorbed on the gold electrode via electrostatic attraction. The FET of amine-functionalized rGO exhibits n-doping effect. Furthermore, FET devices fabricated by this method exhibited high mobility of carriers: maximum 82.5 and 27.5 cm2/Vs for hole and electron, respectively, in ?rGO devices and maximum 6.7 and 1.8 cm2/Vs for hole and electron, respectively, in +rGO devices.

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