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  • 03월 02일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제109회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Condensable InP Quantum Dot Solids

등록일
2012년 3월 1일 17시 04분 30초
접수번호
1555
발표코드
MAT.P-1216 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
4월 25일 (수요일) 18:00~21:00
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
Dao Duy Tung, Mai Xuan Dung, 정현담1
전남대학교 화학과, Vietnam
1전남대학교 화학과, Korea
InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about 10-4A/cm2 at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

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