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제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Chemical Vapor Deposition Growth of Graphene Domains on Copper with Liquid Carbon Source

등록일
2014년 8월 28일 14시 25분 55초
접수번호
0982
발표코드
INOR.P-222 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 15일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
무기화학
저자 및
공동저자
강청, 이진석*
숙명여자대학교 화학과, Korea
Graphene is a two-dimensional carbon material whose structure is one-atom-thick planar sheet of sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice. It has drawn significant attention with its distinguished structural and electrical properties. Extremely high mobility and a tunable band gap make graphene potentially useful for innovative approaches to electronics. Although mechanical exfoliation of graphite and decomposition of SiC surfaces upon thermal treatment have been the main method for graphene, they have some limitations in quality and scalability of as-produced graphene films. Solution-phase and solvothermal syntheses of graphene achieved a major improvement for processing, however for device fabrication, a reproducible method such as chemical vapor deposition (CVD) growth yielding high quality films of controlled thickness is required. In this research, we synthesized rectangular graphene flakes on Cu foils by CVD method using liquid carbon source and controlled its coverage, density and the size of graphene domains by changing reaction parameters. It is important to control these parameters of graphene growth during synthesis in order to achieve tunable properties and optimized device performance.

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