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  • 09월 04일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Resistive Switching Behavior in chalcogenide nanostructures

2014년 8월 28일 14시 41분 03초
PHYS.P-424 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
10월 15일 (수요일) 16:00~19:00
저자 및
이정아, 임영록, 오진영, 임형순1, 박기동2, 정찬수, 장동명, 곽인혜, 박충효, 권엘림3, 박정희*
고려대학교 소재화학과, Korea
1고려대학교 미세소자공학협동/마이크로소자공학, Korea
2고려대학교 미세소자협동과정/마이크로소자, Korea
3고려대학교 마이크로소자, Korea
Resistive switching (RS) behaviors of chalcogenide nanostructures have studied by conductive atomic force microscopy (C-AFM). The chalcogenide nanostructures were prepared by chemical vapor deposition and their crystal structure were determined from X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Dielectrophoresis was used for the alignment of the nanostructures between patterned Au electrodes. The electrical contacts between the nanostructures and Au electrodes were made by focused ion beam assisted Pt deposition. After all fabrication steps are complete, the prepared samples present a structure of Pt/Pt-coated nanostructure/Au. The electrical properties of the devices were obtained in the contact mode by C-AFM with Pt/Ir-coated tips at room temperature and in air. As a result of C-AFM measurements, the devices exhibit both reversible resistive switching behaviors with bipolar switching characteristics and electrical bistability. The ratio between the currents during high resistance state and low resistance state (at a positive voltage) was compared respectively. These results indicate that the electrical bistability and memory phenomena can be seen from the simple device structure of Pt/Pt-coated nanostructure/Au. Finally, it can suggest the possibility of developing simple nanostructure-based resistance memory devices.