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제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Fabrication of Tungsten Disulfide / Reduced Graphene Oxide Composites for High Efficient Thermoelectric Devices

등록일
2014년 8월 28일 15시 25분 20초
접수번호
1088
발표코드
MAT.O-11 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 12시 : 00분
발표형식
구두발표
발표분야
재료화학 - Current Trends in Materials Chemistry
저자 및
공동저자
김수현, 이현정*
국민대학교 신소재공학부, Korea
Thermoelectric performance is determined by figure of merit, ZT. Achievements of high electrical conductivity, high Seebeck coefficient and low thermal conductivity are important for high performance thermoelectric devices. Tungsten disulfide (WS2) has been interested as thermoelectric materials because it has high Seebeck coefficient(α) as 375-1000(㎶/K). However, it has low ZT values due to its low electrical conductivity (10-1-100S/m). On the other hand, carbon based materials usually have high electrical conductivity. Specifically, thermally reduced graphene oxide (rGO) used in this study showed high electrical conductivity of 2.0x104(S/m) and large charge carrier mobility (15,000 cm2/Vs). In this respect, we expect that rGO provides an effective conductive path for transfer of charge carriers in WS2/rGO composites and their thermoelectric property increases. In addition, restacked WS2(R-WS2) has been reported with decrease of thermal conductivity because their disordered structures by restacking induce an effective phonon scattering. Therefore, in this study, we fabricated composites of WS2/rGO as a function of weight percent of rGO in order to obtain optimized ZT values and we compared their properties with those of R-WS2/rGO composite.

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