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114th General Meeting of Korean Chemical Society Fabrication of Tungsten Disulfide / Reduced Graphene Oxide Composites for High Efficient Thermoelectric Devices

Submission Date :
8 / 28 / 2014 , 15 : 25 : 20
Abstract Number :
Presenting Type:
Oral Presentation
Presenting Area :
재료화학 - Current Trends in Materials Chemistry
Authors :
김수현, 이현정*
국민대학교 신소재공학부, Korea
Assigned Code :
MAT.O-11 Assigend Code Guideline
Presenting Time :
FRI, 12 : 00
Thermoelectric performance is determined by figure of merit, ZT. Achievements of high electrical conductivity, high Seebeck coefficient and low thermal conductivity are important for high performance thermoelectric devices. Tungsten disulfide (WS2) has been interested as thermoelectric materials because it has high Seebeck coefficient(α) as 375-1000(㎶/K). However, it has low ZT values due to its low electrical conductivity (10-1-100S/m). On the other hand, carbon based materials usually have high electrical conductivity. Specifically, thermally reduced graphene oxide (rGO) used in this study showed high electrical conductivity of 2.0x104(S/m) and large charge carrier mobility (15,000 cm2/Vs). In this respect, we expect that rGO provides an effective conductive path for transfer of charge carriers in WS2/rGO composites and their thermoelectric property increases. In addition, restacked WS2(R-WS2) has been reported with decrease of thermal conductivity because their disordered structures by restacking induce an effective phonon scattering. Therefore, in this study, we fabricated composites of WS2/rGO as a function of weight percent of rGO in order to obtain optimized ZT values and we compared their properties with those of R-WS2/rGO composite.