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  • 09월 04일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Solution Phase Synthesis of 1D & 2D Bi2Se3

등록일
2014년 8월 28일 16시 34분 49초
접수번호
1265
발표코드
INOR.O-8 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 12시 : 09분
발표형식
구두발표
발표분야
무기화학 - Oral Presentation for Young Inorganic Chemists
저자 및
공동저자
Mukul Pradhan, 최희철1,*
기초과학연구원 원자제어저차원연구단, Korea
1포항공과대학교(POSTECH) 화학과, Korea
Bismuth selenide (Bi2Se3) is an attractive material for both thermoelectric and topological insulator applications. However, it is very difficult to grow high-quality, large 1D and 2D Bi2Se3 material in solution phase. In this study, a simple and reliable method for the growth of large (~15-20 ?m) hexagonal disk as well as nanowire of Bi2Se3 is reported. We can synthesize 2D Bi2Se3 with single grained as well as multiple grained crystals with stacked spirals by controlling the nucleation and growth process. For 1D growth of Bi2Se3 we use Se nanowire as a sacrificial template and then gradual addition of Bi precursor. XRD study shows that the hexagonal disk grown by our technique are highly crystalline and oriented along [006] direction. For 2D Bi2Se3 more than 4 quintuple-layer is necessary to obtain topological insulator property. Raman spectroscopic analysis as well as AFM studies shows that the synthesized Bi2Se3 hexagonal disks are composed of more than 15 quintuple-layer.

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