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제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Heteroleptic Magnesium Complexes as Precursors for MgO Thin Films Growth by Atomic Layer Deposition (ALD)/Metal Organic Chemical Vapor Deposition (MOCVD)

등록일
2014년 8월 28일 16시 36분 51초
접수번호
1274
발표코드
INOR.O-10 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 12시 : 35분
발표형식
구두발표
발표분야
무기화학 - Oral Presentation for Young Inorganic Chemists
저자 및
공동저자
김효숙, 박보근1, 김창균1, 손성욱*, 정택모2,*
성균관대학교 화학과, Korea
1한국화학연구원 화학소재연구본부, Korea
2한국화학연구원 화학소재연구단, Korea
Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical and thermal stability (melting point = 2900°C), it is widely used as inorganic material in diverse areas such as optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. MgO thin flms have been deposited by several techniques. Among them metal?organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) are particularly valuable because they offer the potential for large-area growth and the advantages of good composition control, high film uniformity, and excellent conformal step coverage on nonplanar device geometries. Precursor used in the ALD/MOCVD requires volatility, stability, and low deposition temperature. Various organometallic and coordination compounds have been used as MgO sources, including alkyls, alkoxides, amide, cyclopentadienyls, aminoalkoxide, amidinate, guanidinate, and β-diketonates. In this presentation, we demonstrate synthesis of new heteroleptic magnesium precursors containing combination of β-diketonate/aminoalkoxide and amidinate/aminoalkoxide ligands. The complexes were characterized by NMR, FT-IR, elemental analysis, thermogravimetric analysis (TGA), and single-crystal X-ray diffraction. References 1. B. Sedai, M. J. Heeg and C. H. Winter, J. Organomet. Chem. 2008, 693, 3495. 2. T. Hatanp??, J. Ihanus, J. Kansikas. I. Mutikainen, M. Ritala and M. Leskel?, Chem. Mater. 1999, 11, 1846. 3. A. Sartori, N. E. Habra, M. Bolzan, G. Rossetto, S. Sitran, D. Barreca, A. Gasparotto, M. Casarin, Chem. Mater. 2011, 23, 1113.

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