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제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Electronic alteration of bis-triazolyl-silanes to facilitate facile electron injection for deep-blue phosphorescent OLEDs

등록일
2014년 8월 28일 16시 50분 53초
접수번호
1307
발표코드
IND.P-109 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 15일 (수요일) 16:00~19:00
발표형식
포스터
발표분야
공업화학
저자 및
공동저자
김진형, 강상욱*, 손호진, 한원식1
고려대학교 소재화학과, Korea
1서울여자대학교 화학과, Korea
A series of four triazol-containing compounds for the type of dimethylbis(4-(4-phenyl-5-(4-(X)phenyl)-4H-1,2,4-triazol-3-yl)phenyl)silane (ST) derivative have been tested as electron-transport material for deep blue phosphorescent OLEDs. A systematic change in the electronic structures is achieved in these compounds by incorporating electron-withdrawing (EW) and -donating (ED) groups (X = -CF3, -Me, -tBu, and -OMe) at the 4-position of the phenyltriazole group. From their electrochemical properties obtained from cyclic voltammetric measurement, we observed that the LUMO level was significantly affected by different substituents. Overally, all prepared compounds have relatively high triplet energy levels, which is compatible with the energy level of blue phosphorescent emitting layer in blue OLED device. TDDFT calculations were also performed to figure out their frontier orbital distributions and their transition states. Using current-voltage (I-V) and IS measurement of electron only devices (EOD) and OLED, we have obtained values for the Richardson factor, the barrier height, trap density, density of states (DOS) and carrier mobility of ST derivatives and interfaces as device parameters.

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