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제118회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Morphology Control of Vertically Aligned Silicon Nanowires with Anisotropic Chemical Etching

2016년 8월 31일 22시 14분 09초
PHYS.P-434 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
10월 13일 (목요일) 11:00~12:30
저자 및
홍찬우, 정영순, 윤일선*
충남대학교 화학과, Korea
Here, we studied a simple fabrication of vertically aligned silicon (Si) nanowires with the nanosphere lithography and metal-assisted chemical etching. Self-assembled monolayers of polystyrene (PS) beads were set onto the precleaned Si substrate. The size of the assembled PS beads was subsequently reduced with the oxygen plasma etching (the reactive plasma ion etching). The film of Au with 30 nm thickness was deposited on the substrate using the E-beam evaporator. The PS beads were used as the mask for the Au patterns and the PS beads were detached from the substrate right after the Au deposition. Si nanowires were vertically formed by the catalytic etching of the Si surface under the Au patterned in the mixture solution of HF, H2O2, and H2O (metal assisted chemical etching) and lengths of the Si nanowires were controlled with the reaction time from 0.5 to 3 μm. The morphology of the Si nanowires was controlled with the secondary wet etching. The Si nanowires were anisotropically etched in the mixture etchants of AgNO3 and HF and the etched nanowire were rinsed with a HNO3 solution sequently. The anisotropic wet etching and rinsing of the Si nanowires were performed repeatedly to change the Si nanostructure from the nanowire to the nanocone.