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  • 09월 01일 18시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제118회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Non-destructive Zinc Oxide Atomic Layer Deposition on Graphene to control electronic properties

등록일
2016년 9월 1일 13시 40분 19초
접수번호
2357
발표코드
PHYS.P-439 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 13일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
박진선, 성명모*
한양대학교 화학과, Korea
The graphene, a two dimensional material of carbon, has emerged as a highly promising material for next generation electronic devices due to its unique linear band structure, high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to control precisely its electrical properties like the Fermi level, carrier concentration, and carrier type while maintaining its excellent properties. So, herein, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition of inorganic material. By atomic layer deposition of zinc oxide (ZnO) on graphene using a reactive molecular layer, We can deposite uniform, conformal, of good quality with a low density of pinholes of ZnO thin films on graphene. Through π-π stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT significantly enhanced by the n-doping effect without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability because ZnO functions as an effective thin-film barrier for graphene devices. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT and is well suitable for non-destructive fine-tunable doping of two dimensional materials including not only graphene but also transition metal dichalcogenides (TMDs).

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