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학술발표회초록보기

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  • 09월 01일 18시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제118회 대한화학회 학술발표회, 총회 및 기기전시회 안내 large-scale well-connected graphene grains by selective deposition of inorganic material using atomic layer deposition

등록일
2016년 9월 1일 14시 21분 11초
접수번호
2379
발표코드
PHYS.P-444 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 13일 (목요일) 11:00~12:30
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
NGUYEN VAN LONG, 성명모*
한양대학교 화학과, Korea
Graphene has drawn enormous attention from both academia and industry because of its excellent transport properties, extremely high mechanical strength, good optical transparency, extraordinary high stability and flexibility. Large-scale CVD-grown preparation of high quality graphene is a requirement for commercial applications in next generation electronics, optoelectronics, and chemical and biosensors. However, large scale CVD-grown polycrystalline graphene containing numerous grain boundaries that would effectively scatter charge carriers, thereby forming highly resistive barriers and adversely affect to decrease of carrier mobility of graphene electronic devices. Here we report, large-scale CVD-grown graphene is enhanced electronic transport properties by selective deposition of hexagonal ZnO on defect-rich reactive and grain boundaries using atomic layer deposition (ALD) technique. Selective deposition of ZnO on CVD graphene is improved notably inter-grain mobility with only a negligible change in the free carrier density. A better connectivity between graphene grains was obtained showing an excellent mobility of graphene TFT. Furthermore, Selective deposition of ZnO on CVD graphene can be successfully applied into wafer-scale arrays on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity. In brief, we note that the large-scale well-connected graphene is useful not only for the study of electronic properties of CVD graphene but also for improving other properties of CVD graphene, such as thermal conductivity, mechanical strength, and gas permeability.

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