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  • 09월 01일 18시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제118회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Full color luminescence of InP/GaP/ZnS QDs with heating up process

등록일
2016년 9월 1일 14시 49분 00초
접수번호
2389
발표코드
MAT.P-628 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 14일 (금요일) 11:00~12:30
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
권오훈, 안소연, 박중필, 김상욱1,*
아주대학교 분자과학기술학과, Korea
1아주대학교 응용생명화학공학부, Korea
Quantum dots that are based on InP has attracted a lot of attention for use in optical applications. The quantum dots have been developed in various types that are based on InP, such as InP / ZnS, InP / ZnSe, InP / GaP / ZnS. However, the initial synthesis of hot injection could not produce the required optical properties with high reproducibility.They also could not successfully support the commercialization efforts. Here, we show how to simply synthesize the InP / GaP / ZnS through the heating up process. This reaction can be completed within 0.5h and represent a full color from blue to red. If a blue light-emitting, t-DDT was used in order to prevent particle growth. By adjusting the amount of the Myristic acid showed a color from green to orange. Using a large amount of gallium chloride leads to a red color. We produced InP/GaP/ZnS QDs of high quality by this method (blue QY: ~40%, FWHM: 50 nm; green QY: ~85%, FWHM: 41 nm; red QY: ~60%, FWHM: 65 nm). We used the t-DDT not the sulfur sources reported. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell.

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