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학술발표회초록보기

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  • 09월 01일 18시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제118회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Electrical and optical properties of Al-doped ZnO films prepared by atomic layer deposition at low temperature

등록일
2016년 9월 1일 15시 30분 05초
접수번호
2414
발표코드
MAT.P-629 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 14일 (금요일) 11:00~12:30
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
방지홍, 성명모*
한양대학교 화학과, Korea
Al-doped ZnO was commonly used for the transparent conducting electrodes, but it was not suitable for flexible application so far, because the high fabrication temperature was essential to achieve good electrical properties. In this study, ZnO/Al2O3 multi layers were fabricated by alternating Atomic layer deposition (ALD) on PET substrate at 120℃ using diethlyzinc (DEZ), trimethylaluminum (TMA) and deionized water with additional ultra-violet (UV) exposure. The growth rate, electrical and optical properties of the multi layers were studied with a variety of cycle ratio of ZnO and Al2O3 sub layers. The ZnO/Al2O3 multi layers deposited at 120℃ has low conductivity. However, after few minutes of .UV light exposure, the films show high conductivity. The conductivity can controlled to positive direction by increasing the UV exposure time. Furthermore, the film showed high transparency(80%) and high stability against the degradation of the electrical conductivity.

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