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  • 02월 22일 16시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

New surface etching method of CdSe-ZnS QDs by in-situ generating oxidant

등록일
2008년 2월 14일 11시 49분 11초
접수번호
1334
발표코드
34P232포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 <발표Ⅳ>
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
박영석, 김재일1, 김용태, 이진규2, 채희권
서울대학교 화학교육과,
1삼성SDI(주) 중앙연구소,
2서울대학교 화학부,
Recently there have been attempts to control the emission-color of quantum dots (QDs) through oxidative etching. In previous studies, it was confirmed that direct oxidation of QDs by using oxidants such as H2O2 and benzoly peroxide progressed too rapidly, solvent-assisted oxidation required the regulated temperature to obtain the increased solubility of metal components of QDs. Photo-oxidation approach was also reported but required specialized instruments. Here we suggest a facile etching method to control the emission of TOPO-capped CdSe-ZnS QDs by employing in situ generation of cyclohexene hydroperoxide as an oxidizing intermediate. Preliminary results showed that the luminescence of CdSe-ZnS QDs in cyclohexene can be tunable from orange to blue over 120 d at room temperature. The blue shift of emission maximum could be measured as a function of a kind of olefin, reaction time, temperature and additives, and characterized by PL, HR-TEM, XPS and FT-IR. We will discuss the surface oxidation of ZnS and CdSe in detail.

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