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108th General Meeting of Korean Chemical Society Quantum dot-organosilicon hybrid material

Submission Date :
8 / 24 / 2011 , 17 : 51 : 08
Abstract Number :
108082416484
Presenting Type:
Award Lecture in Division
Presenting Area :
재료화학 - Microfluidic-Based Materials Chemistry
Authors :
정현담
전남대학교 화학과, Korea
Assigned Code :
MAT1-1 Assigend Code Guideline
Presenting Time :
목 14시 : 00분
Quantum dot-organosilicon hybrid material is a class of organic-inorganic one that integrate quantum dots (QDs) and organosilicons at the molecular level. These materials garnered much interest due to the thermal and mechanical stabilities of the organosilicon component and the capability of modifying bulk properties by varying the QD. In detail, variation of QD at the molecular level can be used to tune bulk properties such as optical properties, including refractive index, light absorption properties, and luminescence properties, dielectric properties, and charge trap properties. InP/ZnS core-shell QDs capped by myristic acid (MA) were synthesized by a typical hot injection method and successive ionic layer adsorption (SILAR) approach. Post ligand exchanging these QDs with 3 aminopropyldimethylsiloxane (APDMS) allows to embed QDs to vinyl-functionalized silicones through chemical bonding. Connecting the QDs by short cross linker such as 1,4-divinyltetramethylsilylethane (DVMSE) was demonstrated to investigate the interaction between the QDs in the QD-organosilicon hybrid materials. Photoluminescence (PL) of the hybrid was quenched gradually as its size was increased, which is explained by scatter effect and restricted surface relaxation induced by the linker tension. This lab has also initiated compelling research into silicon quantum dot (Si QD) solids in order to utilize their synergetic benefits. The refractive index value of the Si QD thin film at a 30 °C curing temperature was 1.61 and 1.45 at 800 °C due to complete oxidation of the Si phases. The optical band gap values of 5.49 - 5.90 eV corresponded to Si phases with diameters between 0.82 - 0.74 nm, dispersed throughout the oxidized Si QD thin films and modeled by Si molecular clusters of approximately fourteen silicon atoms. Another kind of hybrid polymer, poly(tetraphenyl)silolesiloxane, was also invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings were responsible for negative charge trapping, while the Si-O-Si inorganic linkages provided the intrachain energy barrier for controlling electron transport.