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제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Synthesis and Characterization of Ruthenium Compound for Semiconductor Device

2014년 8월 28일 16시 47분 43초
INOR.P-252 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
10월 15일 (수요일) 16:00~19:00
저자 및
정은애, 정택모1,*, 손성욱2,*, 박보근, 김창균
한국화학연구원 화학소재연구본부, Korea
1한국화학연구원 화학소재연구단, Korea
2성균관대학교 화학과, Korea
Elemental ruthenium (Ru) has been widely investigated in thin film technology for semiconductor microelectronic devices applications such as an electrode for the high-aspect-ration random access memory (e.g, dynamic RAM, ferroelectric RAM, or magnetic RAM), a gate for metal-oxide semiconductor transistors, and a seed layer for Cu metallization due to a low resistivity (7.1 μΩ?cm in the bulk) and a high work function of 4.7 eV even in the oxidized state. Ru films grown by ALD from a variety of precursors showed excellent properties such as low resistivity of 10-20 ?Ω-㎝ and ~100% step coverage in high-aspect ratio structures. However, previous results exhibited that Ru ALD processes had a relatively long incubation cycle with a lower film growth rate at the initial stages of film deposition. This results in a film with a rough morphology which is unsuitable for conformal film deposition on high aspect-ratio structures. In this presentation, we will talk the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easily synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis, and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction.