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  • 09월 04일 17시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제114회 대한화학회 학술발표회, 총회 및 기기전시회 안내 Block copolymer nanopatterning with shear alignment

2014년 8월 28일 16시 51분 25초
POLY2-3 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
목 14시 : 14분
고분자화학 - Polymer Self-Assembly and Nanopatterning
저자 및
울산과학기술대학교(UNIST) 에너지 및 화학공학부, Korea
Microphase separation of block copolymers in thin films can generate periodic structures and its application has been widely investigated due to its easy processability and low price. In this talk, recent progress in nanopatterning with shear-aligned block copolymers is discussed. For example, cylinder-forming block copolymers can be used as etch masks for the fabrication of nanowire grids, with both fine resolution and scalability. However, achieving a high aspect ratio in these nanostructures, where reactive ion etching is employed for pattern transfer, requires strong etch contrast between two blocks of the copolymer. We achieve this strong contrast by using metal-containing block copolymers: materials which either contain metal as synthesized: iron-containing polystyrene-b-poly(ferrocenylisopropylmethylsilane) (PS-PFS) forming PFS cylinders was employed, and a spin-coated film was aligned by shearing with a polydimethylsiloxane pad. The highly aligned stripe patterns can be used as UV polarizers with high efficiency of (>90%). Furthermore, nanosqure arrays with shear-alignment is introduced. Square or rectangular patterns do not naturally form by spontaneous self-assembly of a simple diblock copolymer, and are a challenge to create. A simple method to create nanoqsquare/rectangular arrays is demonstarted by building up a double-layer film of a cylinder-forming diblock, where each layer is sequentially deposited, shear-aligned independently, and cross-linked. Oxygen reactive ion etching is used to reveal the grid structures, and these grids can in turn form nano-wells in the silicon substrate when the cylinder-forming block is very etch-resistant under the conditions used for silicon etching.