|
Type |
Symposium |
Area |
Material Chemistry for Emerging Large Area Electronic Application |
Room No. |
Samda Hall A |
Time |
FRI 10:00-: |
Code |
MAT2-3 |
Subject |
Organic-Inorganic Hybrid Materials for Large Area Electronic Application |
Authors |
Young-Geun Ha Department of Chemistry, Kyonggi University, Korea |
Abstract |
Recent advances in semiconductor performance afforded by organic π-electron molecules, carbon-based nanomaterials, and metal oxides have been a central scientific and technological research focus over the past decade for flexible and transparent electronics. However, recent advances in semiconductor require corresponding advances in compatible gate dielectric materials, which exhibit excellent electrical properties such as large capacitance, high breakdown strength, low leakage current density, as well as mechanical flexibility with arbitrary substrates. More recently, to combine the desirable properties of high-k metal oxides and organic dielectric processability and mechanical flexibility, a new approach for fabricating gate dielectrics using hybrid composite film has emerged. In this presentation, we introduce novel organic-inorganic hybrid gate dielectrics, fabricated by a facile solution-process for large area electronic application. We first present an overview of hybrid materials for thin-film transistor (TFTs). Then, we next describe the design, fabrication, and applications of solution-deposited organic-inorganic hybrid composite materials as a gate dielectric. |
E-mail |
ygha@kgu.ac.kr |
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