|
Type |
Symposium |
Area |
The World of Nanomaterials Viewed through the Windows of Physical Chemists |
Room No. |
Room 402 |
Time |
FRI 09:25-: |
Code |
PHYS2-2 |
Subject |
Giant Temperature Coefficient of Resistivity and Cryogenic Sensitivity in Silicon with Galvanically Displaced Gold Nanoparticles in Freeze-Out Region |
Authors |
Jae-Won Jang*, Seongpil Hwang1 Department of Physics, Pukyong National University, Korea 1Department of Advanced Materials Chemistry, Korea University, Korea |
Abstract |
The temperature coefficient of resistivity (TCR) and cryogenic sensitivity (Sv) of p-type silicon (p-Si) in the low-temperature region (10−30 K) are remarkably improved by increasing the coverage of galvanically displaced Au nanoparticles (NPs). By increase of the galvanic displacement time from 10 to 30 s, the average surface roughness (Ra ) of the samples increases from 0.31 to 2.31 nm and the coverage rate of Au NPs increases from 3.1% to 21.9%. In the freeze-out region of the sample, an up to 103% increase of TCR and dramatically improved Sv of p-Si (∼5813%) are observed with Au coverage of 21.9% compared to p-Si without galvanically displaced Au NPs. By means of a finite element method (FEM) simulation study, it was found that the increase of surface roughness and a number of Au NPs on p-Si results in a higher temperature gradient and thermoelectric power to cause the unusual TCR and Sv values in the samples. |
E-mail |
jjang@pukyong.ac.kr |
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